Skip to main content

Lead Memory Design Engineer: DRAM & HBM

L6

micron technologyRichardson, TXyesterday
Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions. The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.
Apply now (opens in a new tab)
Apply now (opens in a new tab)

Level

LeadL6

Location

Richardson, TX

Occupation

Microsystems Engineers

Industry

Semiconductor and Related Device Manufacturing

Posted

yesterday

To get sharper similar jobs, create your profile using the link below.

Create profile