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HBM Memory Design Engineer Intern

L1

micron technologyRichardson, TXyesterday
Micron Technology’s DEG is seeking an HBM Memory Design Engineer to design, analyze, and optimize memory circuits used in High Bandwidth Memory products. You will collaborate with global teams to develop high-performance DRAM solutions meeting manufacturability, reliability, and performance targets. You will leverage AI-assisted tools to improve design efficiency and drive data-driven engineering decisions across the product development lifecycle.
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Apply now (opens in a new tab)

Level

InternL1

Location

Richardson, TX

Occupation

Microsystems Engineers

Industry

Semiconductor and Related Device Manufacturing

Posted

yesterday

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